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Other articles related with "wide band gap semiconductor"：
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96806 |
Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳) |
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Atomic and electronic structures of p-type dopants in 4H-SiC |
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Chin. Phys. B
2021 Vol.30 (9): 96806-096806
[Abstract]
(462)
[HTML 1 KB]
[PDF 1294 KB]
(254)
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57101 |
Bo Chen(陈波), Xiang-Qian Li(李向前), Lin Xue(薛林), Yan Han(韩燕), Zhi Yang(杨致), and Long-Long Zhang(张龙龙) |
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First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet |
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Chin. Phys. B
2021 Vol.30 (5): 57101-057101
[Abstract]
(476)
[HTML 1 KB]
[PDF 2093 KB]
(196)
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117101 |
Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春) |
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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors |
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Chin. Phys. B
2017 Vol.26 (11): 117101-117101
[Abstract]
(761)
[HTML 1 KB]
[PDF 1297 KB]
(766)
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